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2SA1162-GR,LF Pnp Bipolar Junction Transistor 50V 80MHz 150MW

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2SA1162-GR,LF Pnp Bipolar Junction Transistor 50V 80MHz 150MW

Name: 2SA1162GRLF Pnp Bipolar Junction Transistor 50V 80MHz 150MW
Brand: Toshiba
Price: 0.01 USD

Brand Name : Toshiba

Model Number : 2SA1162-GR,LF

Place of Origin : Japan

MOQ : 1

Price : USD 0.01-20/piece

Payment Terms : T/T

Delivery Time : 5-8 work days

Packaging Details : SMD/SMT SC-59-3

product : Bipolar transistor-bipolar junction transistor (BJT)

Installation style : SMD/SMT

package/box : SC-59-3

series : 2SA1162

encapsulation : Reel，Cut Tape，MouseReel

Product type : BJTs - Bipolar Transistors

unit weight : 8 mg

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Manufacturer: Toshiba
Product category: bipolar transistor-bipolar junction transistor (BJT)
Technology: si
Installation style: SMD/SMT
Package/box: SC-59-3
Transistor polarity: PNP
Configuration: Single
Maximum DC collector current: 150 mA
Maximum collector-emitter voltage VCEO: 50 V.
Collector-base voltage VCBO: 50 V
Emitter-base voltage VEBO: 5 V
Collector-emitter saturation voltage: 100 mV
Pd- power dissipation: 150 mW
Gain bandwidth product fT: 80 MHz
Maximum operating temperature:+125c
Qualification: AEC-Q101
Series: 2SA1162
Package: Reel
Package: cuttape
Encapsulation: MouseReel
Trademark: Toshiba
Dc collector/basegain hfemin: 70
Maximum DC current gain hFE: 400
Product type: BJTs-Bipolar Transistors
Subcategory: Transistors
Unit weight: 8 mg

2SA1162-GR.pdf

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2SA1162-GR,LF Pnp Bipolar Junction Transistor 50V 80MHz 150MW Images

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2SA1162-GR,LF Pnp Bipolar Junction Transistor 50V 80MHz 150MW

2SA1162-GR,LF Pnp Bipolar Junction Transistor 50V 80MHz 150MW

2SA1162-GR LF Pnp Bipolar Junction Transistor

50V 2SA1162-GR LF

50V Pnp Bipolar Junction Transistor

2SA1162-GR,LF Pnp Bipolar Junction Transistor 50V 80MHz 150MW Images