Si2308BDS-T1-GE3 MOSFET 60V Vds 20V Vgs SOT-23

Manufacturer: Vishay
Product category: MOSFET
Technology: si
Installation style: SMD/SMT
Package/box: SOT-23-3
Transistor polarity: N-Channel
Number of channels: 1 Channel
Vds- Drain-source breakdown voltage: 60 V.
Id- continuous drain current: 2.3a.
Rds On- drain-source on resistance: 156 mOhms
Vgs-gate-source voltage: - 20 V,+20 V
Vgs th- gate-source threshold voltage: 3 V
Qg- gate charge: 2.3 nC
Minimum operating temperature:-55 C.
Maximum operating temperature:+150 C.
Pd- power dissipation: 1.66 W
Channel mode: Enhancement
Trade name: TrenchFET
Package: Reel
Package: cuttape
Encapsulation: MouseReel
Trademark: Vishay Semiconductors
Configuration: Single
Descending time: 7 ns
Product type: MOSFETs
Rise time: 10 ns
Series: SI2
Subcategory: Transistors
Transistor type: 1 N-Channel
Typical closing delay time: 10 ns
Typical turn-on delay time: 4 ns
Part number alias: SI2308BDS-T1-BE3 SI2308BDS-GE3-ge3
Unit weight: 8 mg

Si2308BDS-T1-GE3.pdf

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Si2308BDS-T1-GE3 MOSFET 60V Vds 20V Vgs SOT-23 Images