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BSL207SP L6327 GaN field effect transistor P-Ch -20V 6A TSOP-6

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BSL207SP L6327 GaN field effect transistor P-Ch -20V 6A TSOP-6

Brand Name : Infineon

Model Number : BSL207SP L6327

Place of Origin : Germany

MOQ : 1

Price : USD 0.01-20/piece

Payment Terms : T/T

Delivery Time : 5-8 work days

Packaging Details : SMD/SMT TSOP-6

product : GaN field effect transistor

Installation style : SMD/SMT

Package/box : TSOP-6

encapsulation : Reel,Cut Tape,MouseReel

Product type : GaN FETs

series : BSL207

unit weight : 20 mg

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Manufacturer: Infineon
Product category: GaN field effect transistor
Installation style: SMD/SMT
Package/box: TSOP-6
Transistor polarity: p-channel
Number of channels: 1 Channel
Vds- drain-source breakdown voltage: 20 V.
Id- continuous drain current: 6 A
Rds On- drain-source on resistance: 41mohms
Vgs-gate-source voltage: - 12 V,+12 V
Minimum operating temperature:-55 C.
Maximum operating temperature:+150 C.
Pd- power dissipation: 2 W
Channel mode: Enhancement
Trademark: Infineon Technologies
Configuration: Single
Descending time: 53 ns
Package: Reel
Package: cuttape
Product type: ganfets
Rise time: 17 ns
Series: BSL207
Subcategory: Transistors
Technology: GaN
Typical closing delay time: 42 ns
Typical turn-on delay time: 9 ns
Part number alias: SP000095796 BSL207SPL6327HTSA1.
Unit weight: 20 mg

BSL207SP L6327.pdf


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smd bias resistor transistor

      

smt bias resistor transistor

      
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